M.Tech. (Engineering Physics)


Dr. S. Neeleshwar

Research Publications (2005-2015)


>>Publications in International Journals: 2005-2015


  1. Thermoelectric properties of spark plasma sintered lead telluride nanocubes, B. Khasimsaheb, S. Neeleshwar, M. Srikanth, S. Bathula, B. Gahtori, A. K. Srivsatava, A. Dhar, S. Amirthapandian, B. K. Panigrahi, S. Bhattacharya, R. Podila, A. M. Rao, J. Mater. Res. 30 (2015)2638-2648.
  2. Two Dimensional-Lead Selenide (PbSe) Nanosheets for Renewable Energy Applications, B. Khasimsaheb, S. Neeleshwar, S. Amirthapandiyan, B. K. Panigrahi, Adv. Sci. Lett. 20 (2014) 1383.
  3. PbTe nanocrystal formation by interface mixing of Te/Pb bilayer using low energy ions, S. Gupta, D.C. Agarwal, S.A. Khan, S. Neeleshwar, S. Ojha, S. Srivastava,... Mater. Sci. Eng. B 184 (2014) 58-66.
  4. Superiority of ion irradiation over annealing for enhancing the thermopower of PbTe thin films, Srashti Gupta, D.C. Agarwal, S.K. Tripathi, S. Neeleshwar, B.K. Panigrahi, A. Jacquot, B. Lenoir and D.K. Avasthi, Radiation Phys. Chem. 86 (2013) 6-9.
  5. Study of ion beam synthesized nanostructured PbTe surface, S. Gupta, D. C. Agarwal, S. K. Tripathi, A. Tripathi, S. Neeleshwar, D. K. Avasthi, Appl. Surf. Sci. 265 (2013) 124-129.
  6. Synthesis of stoichiometric PbTe thin film by ion beam induced interface mixing, Srashti Gupta, D.C. Agarwal, Jai Prakash, S.A. Khan, S.K. Tripathi, A. Tripathi, S. Neeleshwar, S.K. Srivastava, B.K. Panigrahi, R. Chandra, and D.K.Avasthi,.Nucl. lnstrum. Meth. B. 289 (2012)22-27.
  7. Synthesis of bismuth telluride nano structures by refluxing method, Srashti Gupta, S. Neeleshwar, V. Kumar and Y.Y. Chen, Adv. Mater. Lett. 3 (2012) 50-54.
  8. Tailoring of Seebeck coefficient with surface roughness effects in silicon sub-50 nm, Manoj Kumar, Anjana Bagga and S. Neeleshwar, Nanoscale Res. Lett. 7 (2012) 169.
  9. Current-Voltage-Temperature (l-V-T) Characteristics of Cr/4H-SiC Schottky Diodes, S. Khanna, S Neeleshwar and A. Noor, J. Electron Devices 9 (2011) 382.
  10. Effect of annealing temperature on the electrical characteristics of Platinum/4H-SiC Schottky barrier diodes, S. Khanna, A. Noor, S. Neeleshwar, M. S. Tyagi, International J. Electronics 98 (2011) 1733.
  11. Electrical Characterization of Cr/4H-SiC Schottky Diodes, S. Khanna, A. Noor, S. Neeleshwar and M. S. Tyagi, International J. Engineering Science Technology 2 (2010) 220.
  12. Size-dependent magnetic parameters of fcc FePt nanoparticles: applications to magnetic hyperthermia, M. S. Seehra, V. Singh, P. Dutta, S. Neeleshwar, Y. Y. Chen, C. L. Chen, S. W. Chou and C. C. Chen, J. Phys. D: Appl. Phys. 43 (2010) 145002.
  13. Interface states and Barrier Heights on Metal/4H-SiC Interfaces, S. Khanna, A. Noor, M. S. Tyagi and S. Neeleshwar, Mater. Science Forum 615 (2009) 427.
  14. Controlled Growth and Magnetic Property of FePt Nanostructure: Cuboctahedron, Octapod, Truncated Cube, and Cube, S. W. Chou, C. L. Zhu, S. Neeleshwar, C. L. Chen, Y. Y. Chen, and C.C. Chen, Chem. Mater. 21 (2009) 4955.
  15. Enhanced magnetoresistance and Griffiths phase induced by Mo substitution in a 0.7Ca0.15Sr0.15Mn1- xMox03 (0 _x_ 0.05), G. N. Rao, J. W. Chen, S. Neeleshwar, Y. Y. Chen and M. K. Wu, J. Phys. D: Appl. Phys. 42 (2009)095003.
  16. Size-Controlled Ex-nihilo Ferromagnetism in Capped CdSe Quantum Dots, M. S. Seehra, P. Dutta, S. Neeleshwar, Y.-Y. Chen, C. L. Chen, S. W. Chou, C. C. Chen, C.-L. Dong, and C.-L. Chang, Advanced Materials 20 (2008) 1656.
  17. Chemical disorder-induced magnetism in FeSi2 nanoparticles, Y. Y. Chen, P. C. Lee,C. B. Tsai, S. Neeleshwar, C. R. Wang, J. C. Ho and H. H. Hamdeh, Appl. Phys. Lett. 91 (2007)251907.
  18. Elastic behavior of oxygen controlled melt growth processed NEG-123 HTSC composite materials, S. Neeleshwar, M. Muralidhar, M. Murakami, P. V. Reddy, Inter. J. Modern Phys. B 20 (2006)667.
  19. Magnetic and superconducting properties of single crystals of Sr2HoRui, Cux05 grown from high temperature solutions, S. M. Rao, K. J. Wang, N. Y. Yen, Y. Y. Chen, C. B. Tsai, S. Neeleshwar, M. K. Wu, J. K. Srivastava, M. C. Ling and H. L. Liu, D. C. Ling, Appl. Phys. Lett. 89 (2006)232509.
  20. On metallic characteristics in some conducting polymers, P. K. Kahol, J. C. Ho, Y. Y. Chen, C. R. Wang, S. Neeleshwar, C. B. Tsai and B. Wessling, Synthetic metals 151 (2005) 65-72.
  21. Size dependent properties of CdSe quantum dots, S. Neeleshwar, C. L. Chen, C. P. Tsai, Y. Y. Chen, C. C. Chen, S. G. Shyu, M .S. Seehra, Phys. Rev. B (Rapid commun.) 71 (2005)201307.
  22. Transport and magnetic properties of metallic La1-xPbx NiO3 oxide, S. Pal, S. Taran, B. K. Chaudhuri, S. Neeleshwar, Y. Y. Chen and H. D. Yang, J. Appl. Phys. 97 (2005) 043707.
  23. Effect of Ni doping in rare-earthmanganite Lafl,Pb93Mn, 1NiXO3 (x =0.0-0.5), Sudipta Pal, Esa Bose, B. K. Chaudhuri, H. D. Yang, S. Neeleshwar, Y. Y. Chen, J. Magn. Magn. Mater. 293 {2005) 872.
  24. Heat capacity, electron paramagnetic resonance, and dc conductivity investigations of dispersed polyaniline and poly-ethylene dioxythiophene, P. K. Kahol, J. C. Ho, Y. Y. Chen, C. R. Wang, S. Neeleshwar, C. B. Tsai, B. Wessling, Synthetic Metals 153 {2005) 169-172.
  25. Preparation, phase stability and characterization of NaxCo02.yH20, C. J. Liu, C. Y. Liao, L. C. Huang, C. H. Su, W. C. Hung, S. Neeleshwar, Y. Y. Chen, Chinese J. Physics 43 (2005) 547.
  26. Critical exponents of the Lao7Sro.3Mn03, La07Ca3Mn03, and Pro.,Cao,MnO, system showing correlation between transport and magnetic properties, S. Taran, B. K. Chaudhuri, S. Chatterjee, H. D. Yang, S. Neeleshwar and Y. Y. Chen, J. Appl. Phys. 98 (2005) 103903.

>>Papers published in Conference/ Symposium Proceedings:


  1. Synthesis of PbTe thermoelectric film by high energy heavy ion beam mixing, Srashti Gupta, D.C.Agarwal, Jai Prakash, S.K. Tripathi, S. Neeleshwar, B.K.Panigrahi, D.K.Avasthi, AIP Conf Proc 1393 (2011) 343.
  2. Surface roughness effects on seebeck coefficient in silicon ultra thin films, M. Kumar, Anjana Bagga and S. Neeleshwar, IEEE 4th International Nanoelectronics Conference (IEEE INEC 2011)._Digital Object Identifier: 10.1109/1NEC.2011.5991770.
  3. Modeling aspects of current calculation of 4H-SiC Schottky diode, S. Khannal, A. Noor, S. Neeleshwar, M. S. Tyagi, International Conference on Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. Digital Object Identifier: 10.1109/AMTA.2008.4763160 (2008) 857.